Delamination of large area layers of hexagonal boron nitride grown by MOVPE

The possibility to fabricate van der Waals heterostructures on the wafer-scale would open up a widerange of potential applications. Hexagonal boron nitride (hBN) is one of the most important componentsin many structures of this kind. Obtaining high quality hBN and the ability to transfer large areas toarbitrary surfaces is a must for future applications of many less durable and less stable van der Waalsmaterials. In this work, we point out key factors that allow us to delaminate large areas of hBN layersgrown by metal-organic vapor phase epitaxy on two-inch sapphire substrates. Using scanning electronmicroscopy and X-ray diffraction, we also compare hBN layers before and after the delamination process.