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Two stage epitaxial growth of wafer-size multilayer h-BN by metal-organic vapor phase epitaxy – a homoepitaxial approach

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cris.lastimport.scopus2024-02-12T20:32:17Z
dc.abstract.enVan der Waals heterostructures based on hexagonal boron nitride (h-BN) and other 2D materials may pave the way for future electronic applications. Wafer-scale uniform h-BN substrates are a must in this respect. In this work, we demonstrate a new growth regime which allows for scalable, uniform synthesis of high quality h-BN layers on 2' sapphire substrates. We propose a new approach to metal organic vapour phase epitaxy of h-BN layers on sapphire substrates. The growth scheme involves an intermediary BN buffer layer grown under self-limiting conditions (continuous flow) followed by the final growth of h-BN with flow modulated epitaxy in one growth run. This scheme can be regarded as homoepitaxial growth of h-BN on a self-limiting buffer. Our studies show that the buffer layer allows to control the nucleation at the crucial early stages of BN layer growth, suppressing unwanted out-of-plane growth. It can also be used to control the density of point-like defects responsible for unwanted luminescence from the h-BN layer. Moreover, our results show that the buffer effectively suppresses the creation of amorphous BN at the sapphire/h-BN interface.
dc.affiliationUniwersytet Warszawski
dc.contributor.authorDąbrowska, Aleksandra Krystyna
dc.contributor.authorBożek, Rafał
dc.contributor.authorBorysiuk, Jolanta
dc.contributor.authorBinder, Johannes
dc.contributor.authorStępniewski, Roman
dc.contributor.authorTokarczyk, Mateusz
dc.contributor.authorWysmołek, Andrzej
dc.contributor.authorKowalski, Grzegorz
dc.date.accessioned2024-01-26T11:09:13Z
dc.date.available2024-01-26T11:09:13Z
dc.date.issued2020
dc.description.financePublikacja bezkosztowa
dc.description.number1
dc.description.volume8
dc.identifier.doi10.1088/2053-1583/ABBD1F
dc.identifier.urihttps://repozytorium.uw.edu.pl//handle/item/123977
dc.identifier.weblinkhttps://iopscience.iop.org/article/10.1088/2053-1583/abbd1f/pdf
dc.languageeng
dc.pbn.affiliationphysical sciences
dc.relation.ispartof2D Materials
dc.relation.pages15017
dc.rightsClosedAccess
dc.sciencecloudnosend
dc.titleTwo stage epitaxial growth of wafer-size multilayer h-BN by metal-organic vapor phase epitaxy – a homoepitaxial approach
dc.typeJournalArticle
dspace.entity.typePublication