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Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

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cris.lastimport.scopus2024-02-12T20:27:58Z
dc.abstract.enWe present detailed Raman studies of graphene deposited on gallium nitride nanowires with different variations in height. Our results indicate that different density and height of nanowires impact graphene properties such as roughness, strain, and carrier concentration as well as density and type of induced defects. Tracing the manifestation of those interactions is important for the application of novel heterostructures. A detailed analysis of Raman spectra of graphene deposited on different nanowire substrates shows that bigger differences in nanowires height increase graphene strain, while a higher number of nanowires in contact with graphene locally reduces the strain. Moreover, the value of graphene carrier concentration is found to be correlated with the density of nanowires in contact with graphene. The lowest concentration of defects is observed for graphene deposited on nanowires with the lowest density. The contact between graphene and densely arranged nanowires leads to a large density of vacancies. On the other hand, grain boundaries are the main type of defects in graphene on rarely distributed nanowires. Our results also show modification of graphene carrier concentration and strain by different types of defects present in graphene. Therefore, the nanowire substrate is promising not only for strain and carrier concentration engineering but also for defect engineering.
dc.affiliationUniwersytet Warszawski
dc.contributor.authorŻytkiewicz, Zbigniew
dc.contributor.authorKierdaszuk, Jakub
dc.contributor.authorGRZONKA, JUSTYNA
dc.contributor.authorPrzewłoka, Aleksandra
dc.contributor.authorSobańska, Marta
dc.contributor.authorDrabińska, Aneta
dc.contributor.authorKaźmierczak, Piotr
dc.contributor.authorKASZUB, WAWRZYNIEC
dc.contributor.authorWysmołek, Andrzej
dc.contributor.authorKrajewska, Aleksandra
dc.contributor.authorKamińska, Maria
dc.date.accessioned2024-01-25T18:11:28Z
dc.date.available2024-01-25T18:11:28Z
dc.date.copyright2021-06-22
dc.date.issued2021
dc.description.accesstimeAT_PUBLICATION
dc.description.financePublikacja bezkosztowa
dc.description.versionFINAL_PUBLISHED
dc.description.volume12
dc.identifier.doi10.3762/BJNANO.12.47
dc.identifier.issn2190-4286
dc.identifier.urihttps://repozytorium.uw.edu.pl//handle/item/117244
dc.identifier.weblinkhttps://www.beilstein-journals.org/bjnano/articles/12/47
dc.languageeng
dc.pbn.affiliationphysical sciences
dc.relation.ispartofBeilstein Journal of Nanotechnology
dc.relation.pages566-577
dc.rightsCC-BY
dc.sciencecloudnosend
dc.subject.encarrier concentration
dc.subject.engallium nitride
dc.subject.engraphene
dc.subject.ennanowires
dc.subject.enRaman spectroscopy
dc.subject.enscattering on defects
dc.subject.enstrain
dc.titleProperties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects
dc.typeJournalArticle
dspace.entity.typePublication