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Detection of Si doping in the AlN/GaN MQW using Super X – EDS measurements

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cris.lastimport.scopus2024-02-12T20:18:26Z
dc.abstract.enA multiple-quantum-well structure consisting of 40 periods of AlN/GaN:Si was vestigated using a transmission electron microscope equipped with energy-ispersive X-ray pectroscopy. The thicknesses of the AlN barriers and the GaN quantum wells ere 4 nm and 6 nm, respectively. The QW layers were doped with Si to a oncentration of 1.3 × 1019cm 3 (0.012 % at). The procedure for quantifying such a doping level using AlN as a standard is presented. The EDS results (0.013 % at) are compared with secondary ion mass spectrometry measurements (0.05 % at).
dc.affiliationUniwersytet Warszawski
dc.contributor.authorBorysiuk, Jolanta
dc.contributor.authorJakieła, Rafał
dc.contributor.authorKoroński, Kamil
dc.contributor.authorStrąk, Paweł
dc.contributor.authorKamińska, Agata
dc.contributor.authorKrukowski, Stanisław
dc.contributor.authorMonroy, Eva
dc.contributor.authorSobczak, Kamil
dc.date.accessioned2024-01-24T21:37:03Z
dc.date.available2024-01-24T21:37:03Z
dc.date.issued2020
dc.description.financePublikacja bezkosztowa
dc.description.volume134
dc.identifier.doi10.1016/J.MICRON.2020.102864
dc.identifier.issn0968-4328
dc.identifier.urihttps://repozytorium.uw.edu.pl//handle/item/104643
dc.identifier.weblinkhttps://www.sciencedirect.com/science/article/pii/S0968432820300603?via%3Dihub
dc.languageeng
dc.pbn.affiliationphysical sciences
dc.relation.ispartofMicron
dc.relation.pages102864-1-7
dc.rightsClosedAccess
dc.sciencecloudnosend
dc.subject.enNitrides
dc.subject.enSi doping
dc.subject.enMultiple-quantum-well
dc.titleDetection of Si doping in the AlN/GaN MQW using Super X – EDS measurements
dc.typeJournalArticle
dspace.entity.typePublication