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Valley relaxation of resident electrons and holes in a monolayer semiconductor: Dependence on carrier density and the role of substrate-induced disorder

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dc.affiliationUniwersytet Warszawski
dc.contributor.authorTongay, S.
dc.contributor.authorCrooker, S. A.
dc.contributor.authorGoryca, Mateusz
dc.contributor.authorLi, Jing
dc.contributor.authorYumigeta, K.
dc.contributor.authorLi, H.
dc.date.accessioned2024-01-26T11:45:19Z
dc.date.available2024-01-26T11:45:19Z
dc.date.issued2021
dc.description.financePublikacja bezkosztowa
dc.description.number4
dc.description.volume5
dc.identifier.doi10.1103/PHYSREVMATERIALS.5.044001
dc.identifier.issn2475-9953
dc.identifier.urihttps://repozytorium.uw.edu.pl//handle/item/124516
dc.identifier.weblinkhttps://link.aps.org/article/10.1103/PhysRevMaterials.5.044001
dc.languageeng
dc.pbn.affiliationphysical sciences
dc.relation.ispartofPhysical Review Materials
dc.rightsClosedAccess
dc.sciencecloudnosend
dc.titleValley relaxation of resident electrons and holes in a monolayer semiconductor: Dependence on carrier density and the role of substrate-induced disorder
dc.typeJournalArticle
dspace.entity.typePublication