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Enhancement of graphene-related and substrate-related Raman modes through dielectric layer deposition

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cris.lastimport.scopus2024-02-12T20:04:20Z
dc.abstract.enIn this report, we demonstrate a method for the enhancement of Raman active modes of hydrogen-intercalated quasi-free-standing epitaxial chemical vapor deposition graphene and the underlying semi-insulating 6H-SiC(0001) substrate through constructive signal interference within atomic-layer-deposited amorphous Al2O3 passivation. We find that an optimum Al2O3 thickness of 85 nm for the graphene 2D mode and one of 82 nm for the SiC longitudinal optical A1 mode at 964 cm-1 enable a 60% increase in their spectra intensities. We demonstrate the method's efficiency in Raman-based determination of the dielectric thickness and high-resolution topographic imaging of a graphene surface.
dc.affiliationUniwersytet Warszawski
dc.contributor.authorWysmołek, Andrzej
dc.contributor.authorCIUK, TYMOTEUSZ
dc.contributor.authorBUDZICH, RAFAŁ
dc.contributor.authorJURCZAK, KAROLINA PIĘTAK -
dc.contributor.authorDobrowolski, Artur
dc.contributor.authorJagiełło, Jakub
dc.date.accessioned2024-01-24T22:48:28Z
dc.date.available2024-01-24T22:48:28Z
dc.date.issued2022
dc.description.financePublikacja bezkosztowa
dc.description.number6
dc.description.volume120
dc.identifier.doi10.1063/5.0082694
dc.identifier.issn0003-6951
dc.identifier.urihttps://repozytorium.uw.edu.pl//handle/item/106227
dc.identifier.weblinkhttps://aip.scitation.org/doi/pdf/10.1063/5.0082694
dc.languageeng
dc.pbn.affiliationphysical sciences
dc.relation.ispartofApplied Physics Letters
dc.relation.pages63105
dc.rightsClosedAccess
dc.sciencecloudnosend
dc.subject.enAlumina
dc.subject.enAluminum oxide
dc.subject.enAtomic layer deposition
dc.subject.enChemical vapor deposition
dc.subject.enSilicon carbide
dc.titleEnhancement of graphene-related and substrate-related Raman modes through dielectric layer deposition
dc.typeJournalArticle
dspace.entity.typePublication