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Disorder-induced natural quantum dots in InAs/GaAs nanostructures

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dc.abstract.enProperties of excitons confined to potential fluctuations due to indium distribution in the wetting layerwhich accompany self-assembled InAs/GaAs quantum dots are reviewed. Spectroscopic studies aresummarized including time-resolved photoluminescence and corresponding single-photon emissioncorrelation measurements. The identification of charge states of excitons is presented which is basedon results of a theoretical analysis of interactions between the involved carriers. The effect of the dots’environment on their optical spectra is also shown.
dc.affiliationUniwersytet Warszawski
dc.contributor.authorBabiński, Adam
dc.date.accessioned2024-01-24T22:07:19Z
dc.date.available2024-01-24T22:07:19Z
dc.date.issued2018
dc.description.financeNie dotyczy
dc.description.number1
dc.description.volume26
dc.identifier.doi10.1016/J.OPELRE.2018.02.001
dc.identifier.issn1230-3402
dc.identifier.urihttps://repozytorium.uw.edu.pl//handle/item/105008
dc.identifier.weblinkhttps://www.sciencedirect.com/science/article/abs/pii/S1230340217301440
dc.languageeng
dc.pbn.affiliationphysical sciences
dc.relation.ispartofOpto-electronics Review
dc.relation.pages73-79
dc.rightsClosedAccess
dc.sciencecloudnosend
dc.titleDisorder-induced natural quantum dots in InAs/GaAs nanostructures
dc.typeJournalArticle
dspace.entity.typePublication