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Magnetoconductance in InN/GaN quantum wells in topological insulator phase

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dc.abstract.enWe present a theoretical study of the magnetic-field effect on the electronic properties of the two-dimensional, hypothetical topological insulator based on the InN/GaN quantum well system. Using the effective two-dimensional Hamiltonian, we have modelled magneto-transport in mesoscopic, symmetric samples of such materials. It turns out that, as in the case of the other two-dimensional topological insulators, the magnetoconductance in such samples is quantized due to the presence of helical edge states for magnetic fields below a certain critical value and for fairly small disorder strength. However, in our case the helical edge transport is much more prone to the disorder than, for example, in the case of topological insulators based on the HgTe/CdTe quantum wells. At low enough level of disorder and for the Fermi energy located in the energy gap of an infinite planar quantum well, we may expect an interesting phenomenon of non-monotonic dependence of the conductance on the magnetic field caused by the complicated interplay of couplings between the heavy hole, light hole and conduction subbands.
dc.affiliationUniwersytet Warszawski
dc.contributor.authorBardyszewski, Witold
dc.contributor.authorŁepkowski, Sławomir
dc.contributor.authorRodak, D.
dc.date.accessioned2024-01-25T05:31:27Z
dc.date.available2024-01-25T05:31:27Z
dc.date.issued2017
dc.description.financeNie dotyczy
dc.description.number2
dc.description.volume118
dc.identifier.doi10.1209/0295-5075/118/27001
dc.identifier.issn0295-5075
dc.identifier.urihttps://repozytorium.uw.edu.pl//handle/item/111707
dc.identifier.weblinkhttp://iopscience.iop.org/article/10.1209/0295-5075/118/27001
dc.languageeng
dc.pbn.affiliationphysical sciences
dc.relation.ispartofEurophysics Letters
dc.relation.pages27001
dc.rightsClosedAccess
dc.sciencecloudnosend
dc.titleMagnetoconductance in InN/GaN quantum wells in topological insulator phase
dc.typeJournalArticle
dspace.entity.typePublication