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On the composite discontinuous Galerkin method for simulations of electric properties of semiconductor devices

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cris.lastimport.scopus2024-02-12T19:39:49Z
dc.abstract.enIn this paper, a variant of the discretization of the van Roosbroeck equations in the equilibrium state with the composite discontinuous Galerkin method for the rectangular domain is discussed. It is based on the symmetric interior penalty Galerkin (SIPG) method. The proposed method accounts for lower regularity of the solution at the interfaces of the layers of the device. It is shown that the discrete problem is well defined and that the discrete solution is unique. Error estimates are derived. Finally, numerical simulations are presented.
dc.affiliationUniwersytet Warszawski
dc.contributor.authorSakowski, Konrad
dc.contributor.authorKempisty, Paweł
dc.contributor.authorStrąk, Paweł
dc.contributor.authorMarcinkowski, Leszek
dc.contributor.authorKrukowski, Stanisław
dc.date.accessioned2024-01-25T15:46:04Z
dc.date.available2024-01-25T15:46:04Z
dc.date.copyright2019-03-18
dc.date.issued2019
dc.description.accesstimeAT_PUBLICATION
dc.description.financeNie dotyczy
dc.description.versionFINAL_PUBLISHED
dc.description.volume51
dc.identifier.doi10.1553/ETNA_VOL51S75
dc.identifier.issn1068-9613
dc.identifier.urihttps://repozytorium.uw.edu.pl//handle/item/114789
dc.identifier.weblinkhttp://etna.mcs.kent.edu/volumes/2011-2020/vol51/abstract.php?vol=51&pages=75-98
dc.languageeng
dc.pbn.affiliationmathemathics
dc.relation.ispartofElectronic Transactions on Numerical Analysis
dc.relation.pages75-98
dc.rightsOther
dc.sciencecloudnosend
dc.subject.encomposite discontinuous Galerkin method
dc.subject.endrift-diffusion
dc.subject.envan Roosbroeck equations
dc.titleOn the composite discontinuous Galerkin method for simulations of electric properties of semiconductor devices
dc.typeJournalArticle
dspace.entity.typePublication