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Hybrid P3HT: PCBM/GaN nanowire/Si cascade heterojunction for photovoltaic application

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cris.lastimport.scopus2024-02-12T20:57:14Z
dc.abstract.enPoly (3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) are commonly used for the fabrication of organic photovoltaics (OPV). Efficiency limitations of OPVs could be circumvented by incorporation of inorganic nanostructures into organic blends. Again, integration of organic solar cells with well-developed silicon photovoltaic technology is ultimately desirable. In the present work, GaN nanowires with diameters of 25–50 nm and two lengths (200 and 500 nm) have been grown using molecular beam epitaxy technique. Solar-grade monocrystalline silicon wafers were used as substrates for nanowire synthesis. GaN nanostructures were incorporated into P3HT:PCBM photoactive layer in order to facilitate charge transfer between P3HT:PCBM and Si. Samples with and without nanowires were compared. Addition of nanowires led to the improvement in photovoltaic performance. Open circuit voltage has risen by 72% and short circuit current density by 200%. Series resistance has decreased 50 times, and power conversion efficiency has risen 20.7 times. Additional maxima are found in photocurrent spectrum corresponding to carriers being generated near GaN absorption edge. Moreover, external quantum efficiency peaks near GaN absorption edge, indicating the formation of current transfer channel via P3HT/GaN/Si cascade heterojunction. Mechanism explaining source of abovementioned improvement is proposed.
dc.affiliationUniwersytet Warszawski
dc.contributor.authorŻytkiewicz, Zbigniew
dc.contributor.authorKorona, Krzysztof
dc.contributor.authorChusnutdinow, Sergij
dc.contributor.authorSobańska, Marta
dc.contributor.authorSadowski, Wojciech
dc.contributor.authorKłosek, Kamil
dc.contributor.authorTchutchulashvili, Giorgi
dc.contributor.authorMech, Wojciech
dc.date.accessioned2024-01-25T03:31:12Z
dc.date.available2024-01-25T03:31:12Z
dc.date.copyright2020-03-29
dc.date.issued2020
dc.description.accesstimeAT_PUBLICATION
dc.description.financePublikacja bezkosztowa
dc.description.number4
dc.description.versionFINAL_PUBLISHED
dc.description.volume22
dc.identifier.doi10.1007/S11051-020-04797-8
dc.identifier.issn1388-0764
dc.identifier.urihttps://repozytorium.uw.edu.pl//handle/item/108763
dc.identifier.weblinkhttp://link.springer.com/content/pdf/10.1007/s11051-020-04797-8.pdf
dc.languageeng
dc.pbn.affiliationphysical sciences
dc.relation.ispartofJournal of Nanoparticle Research
dc.relation.pages84-1-9
dc.rightsCC-BY
dc.sciencecloudnosend
dc.subject.enGaN nanowires
dc.subject.enP3HT
dc.subject.enPCBM
dc.subject.enSolar cells
dc.subject.enMolecular beam epitaxy
dc.subject.enEnergy conversion
dc.titleHybrid P3HT: PCBM/GaN nanowire/Si cascade heterojunction for photovoltaic application
dc.typeJournalArticle
dspace.entity.typePublication