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Molecular Beam Epitaxy of a 2D Material Nearly Lattice Matched to a 3D Substrate: NiTe2 on GaAs
cris.lastimport.scopus | 2024-02-12T19:10:31Z |
dc.abstract.en | The lattice mismatch between interesting 2D materials and commonly available 3D substrates is one of the obstacles in the epitaxial growth of monolithic 2D/3D heterostructures, but a number of 2D materials have not yet been considered for epitaxy. Here, we present the first molecular beam epitaxy growth of a NiTe2 2D transition-metal dichalcogenide. Importantly, the growth is realized on a nearly lattice-matched GaAs(111)B substrate. Structural properties of the grown layers are investigated by electron diffraction, X-ray diffraction, and scanning tunneling microscopy. Surface coverage and atomic-scale order are evidenced by images obtained with atomic force, scanning electron, and transmission electron microscopy. Basic transport properties were measured confirming that the NiTe2 layers are metallic, with a Hall concentration of 1020 to 1023 cm–3, depending on the growth conditions. |
dc.affiliation | Uniwersytet Warszawski |
dc.contributor.author | Borysiewicz, Marta |
dc.contributor.author | Seredyński, Bartłomiej |
dc.contributor.author | Pacuski, Wojciech |
dc.contributor.author | Suffczyński, Jan |
dc.contributor.author | Kret, Sławomir |
dc.contributor.author | Ogorzałek, Zuzanna |
dc.contributor.author | Zajkowska, Wiktoria |
dc.contributor.author | Bożek, Rafał |
dc.contributor.author | Tokarczyk, Mateusz |
dc.contributor.author | Sadowski, Janusz |
dc.date.accessioned | 2024-01-25T12:53:02Z |
dc.date.available | 2024-01-25T12:53:02Z |
dc.date.issued | 2021 |
dc.description.finance | Publikacja bezkosztowa |
dc.description.number | 10 |
dc.description.volume | 21 |
dc.identifier.doi | 10.1021/ACS.CGD.1C00673 |
dc.identifier.issn | 1528-7483 |
dc.identifier.uri | https://repozytorium.uw.edu.pl//handle/item/112849 |
dc.identifier.weblink | https://doi.org/10.1021/acs.cgd.1c00673 |
dc.language | eng |
dc.pbn.affiliation | physical sciences |
dc.relation.ispartof | Crystal Growth & Design |
dc.relation.pages | 5773–5779 |
dc.rights | ClosedAccess |
dc.sciencecloud | nosend |
dc.title | Molecular Beam Epitaxy of a 2D Material Nearly Lattice Matched to a 3D Substrate: NiTe2 on GaAs |
dc.type | JournalArticle |
dspace.entity.type | Publication |