Artykuł w czasopiśmie
Brak miniatury
Licencja
ClosedAccessDostęp zamknięty
 

Experimental and first-principles studies of high-pressure effects on the structural, electronic, and optical properties of semiconductors and lanthanide doped solids

Uproszczony widok
cris.lastimport.scopus2024-02-12T19:00:33Z
dc.abstract.enIn this paper we present a broad overview of our recent experimental and theoretical results obtained for different types of materials: CdTe and CuGa1− x In x S2 chalcopyrite semiconductors, GaN/AlN wide band gap semiconductor quantum wells, and lanthanide-doped dielectric materials. The analysis of pressure-induced phase transitions, variations of the band gaps, refractive index and the pressure dependence of optical properties of these materials is discussed. The presented results show that the high pressure technique is a very useful tool for scientific research and development of of light-emitting technologies. It allows for identification of radiative recombination mechanisms in solid-state light emitters. In polar III–nitride semiconductors, ab initio calculations revealed that the pressure-induced change of the band gap plays minor role, whereas the built-in electric field in heterostructures increases with pressure thus affecting their basic physical properties, i.e., producing a large red-shift of the photoluminescence and lowering the quantum efficiency due to the quantum confined Stark effect. For wide (>4 nm) quantum wells, the reduction of the band-to-band emission efficiency leads to deep defect dominant emission which is almost pressure independent. The observed behavior proves that pressure investigations combined with ab initio calculations can identify the nature of the optical transitions and the main physical factors affecting the radiative efficiency in polar quantum well systems. Furthermore, high pressure studies of the emission and excitation spectra of Y2O2S doped with Tb3+ and Eu3+ allowed estimating the energies of the ground states of all divalent and trivalent lanthanide ions in respect to the valence and conduction band edges of the Y2O2S host. Band gap energy and difference between energies of the ground states of lanthanide ions and band edges have been calculated as a function of pressure. It is shown that pressure causes an increase of the energy of localized states related to the lanthanide ions with respect to the valence band, and an increase of the band gap energy.
dc.affiliationUniwersytet Warszawski
dc.contributor.authorMahlik, Sebastian
dc.contributor.authorKamińska, Agata
dc.contributor.authorBrik, Mikhail
dc.contributor.authorJankowski, Dawid
dc.contributor.authorStrąk, Paweł
dc.contributor.authorKorona, Krzysztof
dc.contributor.authorMonroy, Eva
dc.contributor.authorKrukowski, Stanisław
dc.date.accessioned2024-01-25T00:07:47Z
dc.date.available2024-01-25T00:07:47Z
dc.date.issued2017
dc.description.financeNie dotyczy
dc.description.number5, suppl. 3
dc.description.volume56
dc.identifier.doi10.7567/JJAP.56.05FA02
dc.identifier.issn0021-4922
dc.identifier.urihttps://repozytorium.uw.edu.pl//handle/item/106746
dc.identifier.weblinkhttps://repozytorium.bg.ug.edu.pl/info/article/UOG8fb525d9709545ffa0b9638b75d4890a/
dc.languageeng
dc.pbn.affiliationphysical sciences
dc.relation.ispartofJapanese Journal of Applied Physics
dc.relation.pages1-17
dc.rightsClosedAccess
dc.sciencecloudnosend
dc.titleExperimental and first-principles studies of high-pressure effects on the structural, electronic, and optical properties of semiconductors and lanthanide doped solids
dc.typeJournalArticle
dspace.entity.typePublication