Artykuł w czasopiśmie
Brak miniatury
Licencja
CC-BYCC-BY - Uznanie autorstwa
 

Surface Characterization of MoS2 Atomic Layers Mechanically Exfoliated on a Si Substrate

Uproszczony widok
cris.lastimport.scopus2024-02-12T18:58:27Z
dc.abstract.enMo disulfide overlayers with the thickness exceeding 1.77 nm were obtained on Si substrates through mechanical exfoliation. The resulting Mo disulfide flakes were then analyzed ex situ using combination of Auger electron spectroscopy (AES), elastic-peak electron spectroscopy (EPES) and scanning electron microscopy (SEM) in order to characterize their surface chemical composition, electron transport phenomena and surface morphology. Prior to EPES measurements, the Mo disulfide surface was sputter-cleaned and amorphized by 3 kV argon ions, and the resulting S/Mo atomic ratio varied in the range 1.80-1.88, as found from AES measurements. The SEM images revealed single crystalline small-area (up to 15 mu m in lateral size) Mo disulfide flakes having polygonal or near-triangular shapes. Such irregular-edged flakes exhibited high crystal quality and thickness uniformity. The inelastic mean free path (IMFP), characterizing electron transport, was evaluated from the relative EPES using Au reference material for electron energiesE= 0.5-2 keV. Experimental IMFPs,lambda, determined for the AES-measured surface compositions were approximated by the simple function lambda=kE(p), wherek= 0.0289 andp= 0.946 were fitted parameters. Additionally, these IMFPs were compared with IMFPs resulting from the two methods: (i) present calculations based on the formalism of the Oswald et al. model; (ii) the predictive equation of Tanuma et al. (TPP-2M) for the measured Mo(0.293)S(0.551)C(0.156)surface composition (S/Mo = 1.88), and also for stoichiometric MoS(2)composition. The fitted function was found to be reasonably consistent with the measured, calculated and predicted IMFPs. We concluded that the measured IMFP value at 0.5 keV was only slightly affected by residual carbon contamination at the Mo disulfide surface.
dc.affiliationUniwersytet Warszawski
dc.contributor.authorKrawczyk, Mirosław
dc.contributor.authorPisarek, Marcin
dc.contributor.authorJabłoński, Aleksander
dc.contributor.authorSzoszkiewicz, Robert
dc.date.accessioned2024-01-26T09:25:04Z
dc.date.available2024-01-26T09:25:04Z
dc.date.copyright2020-08-14
dc.date.issued2020
dc.description.accesstimeAT_PUBLICATION
dc.description.financeŚrodki finansowe przyznane na realizację projektu w zakresie badań naukowych lub prac rozwojowych
dc.description.number16
dc.description.versionOTHER
dc.description.volume13
dc.identifier.doi10.3390/MA13163595
dc.identifier.issn1996-1944
dc.identifier.urihttps://repozytorium.uw.edu.pl//handle/item/121176
dc.identifier.weblinkhttps://www.mdpi.com/1996-1944/13/16/3595/pdf
dc.languageeng
dc.pbn.affiliationchemical sciences
dc.relation.ispartofMaterials
dc.relation.pages3595
dc.rightsCC-BY
dc.sciencecloudnosend
dc.subject.enmolybdenum disulfide
dc.subject.enAuger electron spectroscopy
dc.subject.enscanning electron microscopy
dc.subject.ensurface composition and morphology
dc.subject.enelastic-peak electron spectroscopy
dc.subject.enelectron inelastic mean free path
dc.titleSurface Characterization of MoS2 Atomic Layers Mechanically Exfoliated on a Si Substrate
dc.typeJournalArticle
dspace.entity.typePublication