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Effects of Mg dopant in Al-composition-graded Al x Ga1−x N (0.45 ≤ x) on vertical electrical conductivity of ultrawide bandgap AlGaN p–n junction
dc.abstract.en | A vertical electrical conductivity of an ultrawide bandgap AlGaN p–n junction with Al-composition-graded AlxGa1−xN (0.45 ≤ x) p-type layer was systematically investigated via experiments and numerical simulation. The experimental results revealed that the initial Al composition of the Al-composition-graded AlGaN should be sufficiently high without Mg dopants to generate enough holes by polarization-induced doping even though the bandgap is higher than that of conventional bulk p-AlGaN. The mechanism behind the vertical conduction is investigated by the simulation, which shows that three-dimensional hole gas formed by the polarization is compensated with electrons generated by unintentionally formed donors. |
dc.affiliation | Uniwersytet Warszawski |
dc.contributor.author | Piechota, Jacek |
dc.contributor.author | Sakowski, Konrad |
dc.contributor.author | Kempisty, Paweł |
dc.contributor.author | Sato, Kosuke |
dc.contributor.author | Yamada, Kazuki |
dc.contributor.author | Iwaya, Motoaki |
dc.contributor.author | Takeuchi, Tetsuya |
dc.contributor.author | Kamiyama, Satoshi |
dc.contributor.author | Krukowski, Stanisław |
dc.contributor.author | Kangawa, Yoshihiro |
dc.contributor.author | Akasaki, Isamu |
dc.date.accessioned | 2024-01-24T22:28:37Z |
dc.date.available | 2024-01-24T22:28:37Z |
dc.date.issued | 2021 |
dc.description.finance | Publikacja bezkosztowa |
dc.description.number | 9 |
dc.description.volume | 14 |
dc.identifier.doi | 10.35848/1882-0786/AC1D64 |
dc.identifier.issn | 1882-0778 |
dc.identifier.uri | https://repozytorium.uw.edu.pl//handle/item/105784 |
dc.identifier.weblink | https://iopscience.iop.org/article/10.35848/1882-0786/ac1d64 |
dc.language | eng |
dc.pbn.affiliation | mathemathics |
dc.relation.ispartof | Applied Physics Express |
dc.relation.pages | 96503:1-6 |
dc.rights | ClosedAccess |
dc.sciencecloud | nosend |
dc.title | Effects of Mg dopant in Al-composition-graded Al x Ga1−x N (0.45 ≤ x) on vertical electrical conductivity of ultrawide bandgap AlGaN p–n junction |
dc.type | JournalArticle |
dspace.entity.type | Publication |