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Optical signatures of type I–type II band alignment transition in Cd(Se,Te)/ZnTe self-assembled quantum dots

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dc.abstract.enABSTRACT Self-assembled Cd(Se,Te) quantum dots with various Se compositions embedded in the ZnTe matrix are grown by molecular beam epitaxy. A huge redshift of the near band edge emission, from 2.1 eV to 1.5 eV, with an increasing Se content in the dots is observed. It is accompanied by an increase in the excitonic lifetime by the factor of 10. We associate these effects with a gradual change from the direct type I confinement character in CdTe/ZnTe quantum dots to the staggered type II band alignment in the case of Cd(Se,Te)/ZnTe dots. This interpretation is consistent with the micro-photoluminescence study of several individual quantum dots, which reveals a gradual decrease in the biexciton–exciton energy difference with the increasing content of Se in the dots, which leads ultimately to the change from the binding to antibinding character of biexcitons. The latter effect originates, most likely, from the increasing Coulomb repulsion between excitons forming dipoles at the dot/barrier interface.
dc.affiliationUniwersytet Warszawski
dc.contributor.authorAleszkiewicz, Marta
dc.contributor.authorKarczewski, Grzegorz
dc.contributor.authorWojnar, Piotr
dc.contributor.authorWojtowicz, Tomasz
dc.contributor.authorSzymura, Małgorzata
dc.contributor.authorKossut, Jacek
dc.contributor.authorKazimierczuk, Tomasz
dc.contributor.authorKossacki, Piotr
dc.contributor.authorBaranowski, Piotr
dc.contributor.authorRodek, Aleksander
dc.date.accessioned2024-01-25T15:58:23Z
dc.date.available2024-01-25T15:58:23Z
dc.date.issued2020
dc.description.financePublikacja bezkosztowa
dc.description.number11
dc.description.volume117
dc.identifier.doi10.1063/5.0016326
dc.identifier.issn0003-6951
dc.identifier.urihttps://repozytorium.uw.edu.pl//handle/item/114981
dc.identifier.weblinkhttp://aip.scitation.org/doi/pdf/10.1063/5.0016326
dc.languageeng
dc.pbn.affiliationphysical sciences
dc.relation.ispartofApplied Physics Letters
dc.relation.pages113101-1-6
dc.rightsClosedAccess
dc.sciencecloudnosend
dc.subject.enHeterostructures
dc.subject.enQuantum dots
dc.subject.enEpitaxy
dc.subject.enMicro-photoluminescence
dc.subject.enBand gap
dc.subject.enSemiconductors
dc.subject.enEmission spectroscopy
dc.subject.enExcitons
dc.titleOptical signatures of type I–type II band alignment transition in Cd(Se,Te)/ZnTe self-assembled quantum dots
dc.typeJournalArticle
dspace.entity.typePublication