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Narrow Excitonic Lines and Large-Scale Homogeneity of Transition-Metal Dichalcogenide Monolayers Grown by Molecular Beam Epitaxy on Hexagonal Boron Nitride

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cris.lastimport.scopus2024-02-12T19:56:02Z
dc.abstract.enMonolayer transition-metal dichalcogenides (TMDs) manifest exceptional optical properties related to narrow excitonic resonances. However, these properties have been so far explored only for structures produced by techniques inducing considerable large-scale inhomogeneity. In contrast, techniques which are essentially free from this disadvantage, such as molecular beam epitaxy (MBE), have to date yielded only structures characterized by considerable spectral broadening, which hinders most of the interesting optical effects. Here, we report for the first time on the MBE-grown TMD exhibiting narrow and resolved spectral lines of neutral and charged exciton. Moreover, our material exhibits unprecedented high homogeneity of optical properties, with variation of the exciton energy as small as ±0.16 meV over a distance of tens of micrometers. Our recipe for MBE growth is presented for MoSe2 and includes the use of atomically flat hexagonal boron nitride substrate. This recipe opens a possibility of producing TMD heterostructures with optical quality, dimensions, and homogeneity required for optoelectronic applications.
dc.affiliationUniwersytet Warszawski
dc.contributor.authorTaniguchi, Hiroaki
dc.contributor.authorWatanabe, Kenji
dc.contributor.authorNogajewski, Karol
dc.contributor.authorKossacki, Piotr
dc.contributor.authorBożek, Rafał
dc.contributor.authorPotemski, Marek
dc.contributor.authorSeredyński, Bartłomiej
dc.contributor.authorPołczyńska, Karolina E.
dc.contributor.authorPacuski, Wojciech
dc.contributor.authorKazimierczuk, Tomasz
dc.contributor.authorKret, Sławomir
dc.contributor.authorSadowski, Janusz
dc.contributor.authorOreszczuk, Kacper
dc.contributor.authorGrzeszczyk, Magdalena
dc.contributor.authorBogucki, Aleksander
dc.contributor.authorRodek, Aleksander
dc.contributor.authorKucharek, Julia
dc.date.accessioned2024-01-25T13:29:43Z
dc.date.available2024-01-25T13:29:43Z
dc.date.copyright2020-02-27
dc.date.issued2020
dc.description.accesstimeAT_PUBLICATION
dc.description.financeŚrodki finansowe przyznane na realizację projektu w zakresie badań naukowych lub prac rozwojowych
dc.description.number5
dc.description.versionFINAL_PUBLISHED
dc.description.volume20
dc.identifier.doi10.1021/ACS.NANOLETT.9B04998
dc.identifier.issn1530-6984
dc.identifier.urihttps://repozytorium.uw.edu.pl//handle/item/113338
dc.identifier.weblinkhttp://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.9b04998
dc.languageeng
dc.pbn.affiliationphysical sciences
dc.relation.ispartofNano Letters
dc.relation.pages3058-3066
dc.rightsCC-BY-NC-ND
dc.sciencecloudnosend
dc.subject.entransition-metal dichalcogenides
dc.subject.enmolecular beam epitaxy
dc.subject.enoptical spectroscopy
dc.subject.enphotoluminescence
dc.subject.enexciton
dc.subject.enmonolayer
dc.titleNarrow Excitonic Lines and Large-Scale Homogeneity of Transition-Metal Dichalcogenide Monolayers Grown by Molecular Beam Epitaxy on Hexagonal Boron Nitride
dc.typeJournalArticle
dspace.entity.typePublication