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Highly effective gating of graphene on GaN

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dc.abstract.enBy using four-layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications. An observed Raman G band position shift larger than 8.5 cm−1 corresponds to an increase in carrier concentration of about 1.2·1013 cm−2. The presence of a distinct G band splitting together with a narrow symmetric 2D band indicates turbostratic layer stacking and suggests the presence of a high potential gradient near the Schottky junction even at zero bias. An analysis based on electroreflectance measurements and a modified Richardson equation confirmed that graphene on n-GaN separated by an undoped GaN spacer behaves like a capacitor at reverse bias. At least 60% of G subband position shifts occur at forward bias, which is related to a rapid reduction of electric field near the Schottky junction. Our studies demonstrate the usefulness of few layer turbostratic graphene deposited on GaN for tracing electron–phonon coupling in graphene. Multilayer graphene also provides uniform and stable electric contacts. Moreover, the observed bias sensitive G band splitting can be used as an indicator of charge transfer in sensor applications in the low bias regime.
dc.affiliationUniwersytet Warszawski
dc.contributor.authorKierdaszuk, Jakub
dc.contributor.authorPrzewłoka, Aleksandra
dc.contributor.authorDrabińska, Aneta
dc.contributor.authorKaszub, Wawrzyniec
dc.contributor.authorBinder, Johannes
dc.contributor.authorKrajewska, Aleksandra
dc.contributor.authorZłotnik, Sebastian
dc.contributor.authorPiętak, Karolina
dc.contributor.authorRozbiegała, Ewelina
dc.contributor.authorWysmołek, Andrzej
dc.contributor.authorKamińska, Maria
dc.date.accessioned2024-01-25T03:11:30Z
dc.date.available2024-01-25T03:11:30Z
dc.date.issued2021
dc.description.financePublikacja bezkosztowa
dc.description.volume560
dc.identifier.doi10.1016/J.APSUSC.2021.149939
dc.identifier.issn0169-4332
dc.identifier.urihttps://repozytorium.uw.edu.pl//handle/item/108471
dc.identifier.weblinkhttps://api.elsevier.com/content/article/PII:S0169433221010151?httpAccept=text/xml
dc.languageeng
dc.pbn.affiliationphysical sciences
dc.relation.ispartofApplied Surface Science
dc.relation.pages149939
dc.rightsClosedAccess
dc.sciencecloudnosend
dc.titleHighly effective gating of graphene on GaN
dc.typeJournalArticle
dspace.entity.typePublication