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Growth temperature induced changes of luminescence in epitaxial BN: from colour centres to donor–acceptor recombination

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dc.abstract.enDefects play a very important role in semiconductors and only the control over the defect properties allows the implementation of materials in dedicated applications. We present an investigation of the UV luminescence of defects in hexagonal boron nitride (h-BN) grown by Metal Organic Vapor Phase Epitaxy (MOVPE). Such intentionally introduced defects are important for applications like deep UV emission and quantum information. In this work, we performed photoluminescence and cathodoluminescence experiments on a set of h-BN layers grown by MOVPE at different growth temperatures (tgr). The obtained defect-related spectra in the ultraviolet range include well-known lines at about 230 nm (X230, hν = 5.4 eV) and 300 nm (C300 – the brightest one, hν = 4.14 eV) as well as a rarely observed band with a zero-phonon line at 380 nm (C380, hν = 3.24 eV). The C300 and C380 bands have the characteristic of a color centre showing sharp lines (0.6 nm width) at 5 K. These lines are most probably an internal transition of carbon-related defects. We show that for samples grown at high temperatures (tgr > 1200 °C), the lines related to the color centres C are replaced by broad bands at 330 nm and 400 nm, which we marked as D330 and D400, respectively. The D bands have similar central energies to the C bands but extend over a large energy range, so we propose that the D emission is due to a shallow donor to deep acceptor recombination. Time-resolved photoluminescence analysis determined the lifetimes of the individual lines in the range from 0.9 ns (C300), 1.8 ns (C380) to 4 ns (D400). The C300 and C380 color centre bands are composed of a series of characteristic lines that are due to the interaction with phonons. The E1u (198 meV) and A2u (93 meV) phonon replicas have been identified.
dc.affiliationUniwersytet Warszawski
dc.contributor.authorDąbrowska, Aleksandra
dc.contributor.authorWysmołek, Andrzej
dc.contributor.authorStępniewski, Roman
dc.contributor.authorTokarczyk, Mateusz
dc.contributor.authorKorona, Tatiana
dc.contributor.authorReszka, Anna
dc.contributor.authorIwański, Jakub
dc.contributor.authorBinder, Johannes
dc.contributor.authorKorona, Krzysztof
dc.date.accessioned2024-01-25T02:28:43Z
dc.date.available2024-01-25T02:28:43Z
dc.date.copyright2023-05-25
dc.date.issued2023
dc.description.accesstimeAT_PUBLICATION
dc.description.financeŚrodki finansowe, o których mowa w art. 365 pkt. 2 ustawy
dc.description.number22
dc.description.versionFINAL_PUBLISHED
dc.description.volume15
dc.identifier.doi10.1039/D3NR00578J
dc.identifier.issn2040-3364
dc.identifier.urihttps://repozytorium.uw.edu.pl//handle/item/108194
dc.identifier.weblinkhttp://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR00578J
dc.languageeng
dc.pbn.affiliationchemical sciences
dc.relation.documentshttps://doi.org/10.18150/JMDHHU
dc.relation.ispartofNanoscale
dc.relation.pages9864-9877
dc.rightsCC-BY
dc.sciencecloudnosend
dc.titleGrowth temperature induced changes of luminescence in epitaxial BN: from colour centres to donor–acceptor recombination
dc.typeJournalArticle
dspace.entity.typePublication