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Surface-enhanced Raman scattering in graphene deposited on AlxGa1-xN/GaN axial heterostructure nanowires

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dc.abstract.enThe surface-enhanced Raman scattering in graphene deposited on AlxGa1-xN/GaN axial heterostructure nanowires was investigated. It was found that the intensity of graphene Raman spectra is not correlated with aluminium content. Analysis of graphene Raman band parameters, Kelvin probe force microscopy, and electroreflectance showed a screening of polarisation charges. Theoretical calculations demonstrated that plasmon resonance in graphene is far beyond the Raman spectral range. This excludes the presence of an electromagnetic mechanism of surface-enhanced Raman scattering, hence suggesting a chemical mechanism of enhancement.
dc.affiliationUniwersytet Warszawski
dc.contributor.authorŻytkiewicz, Zbigniew
dc.contributor.authorCzajkowski, Krzysztof M.
dc.contributor.authorAntosiewicz, Tomasz
dc.contributor.authorSobańska, Marta
dc.contributor.authorWysmołek, Andrzej
dc.contributor.authorTokarczyk, Mateusz
dc.contributor.authorBożek, Rafał
dc.contributor.authorKierdaszuk, Jakub
dc.contributor.authorPrzewłoka, Aleksandra
dc.contributor.authorDrabińska, Aneta
dc.contributor.authorKowalski, Grzegorz
dc.contributor.authorKASZUB, WAWRZYNIEC
dc.contributor.authorKamińska, Maria
dc.contributor.authorKrajewska, Aleksandra
dc.date.accessioned2024-01-26T09:24:58Z
dc.date.available2024-01-26T09:24:58Z
dc.date.issued2019
dc.description.financeNie dotyczy
dc.description.volume475
dc.identifier.doi10.1016/J.APSUSC.2019.01.040
dc.identifier.issn0169-4332
dc.identifier.urihttps://repozytorium.uw.edu.pl//handle/item/121169
dc.identifier.weblinkhttps://reader.elsevier.com/reader/sd/pii/S0169433219300492?token=0DE8552C723467F0F2F84C60355B76F91831A2463FAE5E0623B979823CD65CB4C2B59A130CAC6C34CBB4271F3BE6E014
dc.languageeng
dc.pbn.affiliationphysical sciences
dc.relation.ispartofApplied Surface Science
dc.relation.pages559-564
dc.rightsClosedAccess
dc.sciencecloudnosend
dc.titleSurface-enhanced Raman scattering in graphene deposited on AlxGa1-xN/GaN axial heterostructure nanowires
dc.typeJournalArticle
dspace.entity.typePublication