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Charge transport in MBE-grown 2H-MoTe2 bilayers with enhanced stability provided by an AlOx capping layer

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cris.lastimport.scopus2024-02-12T20:42:00Z
dc.abstract.enThin layers of transition metal dichalcogenides have been intensively studied over the last few years due to their novel physical phenomena and potential applications. One of the biggest problems in laboratory handling and moving on to application-ready devices lies in the high sensitivity of their physicochemical properties to ambient conditions. We demonstrate that novel, in situ capping with an ultra-thin, aluminum film efficiently protects thin MoTe2 layers stabilizing their electronic transport properties after exposure to ambient conditions. The experiments have been performed on bilayers of 2H-MoTe2 grown by molecular beam epitaxy on large area GaAs(111)B substrates. The crystal structure, surface morphology and thickness of the deposited MoTe2 layers have been precisely controlled in situ with a reflection high energy electron diffraction system. As evidenced by high resolution transmission electron microscopy, MoTe2 films exhibit perfect arrangement in the 2H phase and the epitaxial relation to the GaAs(111)B substrates. After the growth, the samples were in situ capped with a thin (3 nm) film of aluminum, which oxidizes after exposure to ambient conditions. This oxide serves as a protective layer to the underlying MoTe2. Resistivity measurements of the MoTe2 layers with and without the cap, exposed to low vacuum, nitrogen and air, revealed a huge difference in their stability. The significant rise of resistance is observed for the unprotected sample while the resistance of the protected one is constant. Wide range temperature resistivity studies showed that charge transport in MoTe2 is realized by hopping with an anomalous hopping exponent of x ≃ 0.66, reported also previously for ultra-thin, metallic layers.
dc.affiliationUniwersytet Warszawski
dc.contributor.authorSeredyński, Bartłomiej
dc.contributor.authorKorona, Krzysztof
dc.contributor.authorMierzejewski, Janusz
dc.contributor.authorBorysiewicz, Marta
dc.contributor.authorKwiatkowski, Adam
dc.contributor.authorPacuski, Wojciech
dc.contributor.authorKret, Sławomir
dc.contributor.authorWasik, Dariusz
dc.contributor.authorSadowski, Janusz
dc.contributor.authorOgorzałek, Zuzanna
dc.contributor.authorGrzeszczyk, Magdalena
dc.date.accessioned2024-01-24T19:12:34Z
dc.date.available2024-01-24T19:12:34Z
dc.date.issued2020
dc.description.financePublikacja bezkosztowa
dc.description.number31
dc.description.volume12
dc.identifier.doi10.1039/D0NR03148H
dc.identifier.issn2040-3364
dc.identifier.urihttps://repozytorium.uw.edu.pl//handle/item/102962
dc.identifier.weblinkhttp://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR03148H
dc.languageeng
dc.pbn.affiliationphysical sciences
dc.relation.ispartofNanoscale
dc.relation.pages16535-16542
dc.rightsClosedAccess
dc.sciencecloudnosend
dc.titleCharge transport in MBE-grown 2H-MoTe2 bilayers with enhanced stability provided by an AlOx capping layer
dc.typeJournalArticle
dspace.entity.typePublication