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X-ray and Raman determination of InAsSb mole fraction for x < 0.5

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cris.lastimport.scopus2024-02-12T20:41:41Z
dc.abstract.enInAsSb epilayers grown on GaAs substrates by molecular beam epitaxy have been studied using X-ray diffraction and Raman scattering. X-ray diffraction was used to determine the mole fraction of presented samples. In Raman spectrum, we analyzed for each sample not only the position of LO InAs and InSb phonons but also intensities of those. We found correlation between intensities ratio of LO phonons and the mole fraction of measured samples and we proposed a method how to calculate InAsSb mole fraction only using Raman spectroscopy.
dc.affiliationUniwersytet Warszawski
dc.contributor.authorWysmołek, Andrzej
dc.contributor.authorBenyahia, Djalal
dc.contributor.authorMurawski, Krzysztof
dc.contributor.authorGrodecki, Kacper
dc.contributor.authorMartyniuk, Piotr
dc.contributor.authorJankiewicz, Bartłomiej
dc.date.accessioned2024-01-26T12:17:42Z
dc.date.available2024-01-26T12:17:42Z
dc.date.issued2018
dc.description.financeNie dotyczy
dc.description.volume498
dc.identifier.doi10.1016/J.JCRYSGRO.2018.06.004
dc.identifier.issn0022-0248
dc.identifier.urihttps://repozytorium.uw.edu.pl//handle/item/125637
dc.languageeng
dc.pbn.affiliationphysical sciences
dc.relation.ispartofJournal of Crystal Growth
dc.relation.pages137-139
dc.rightsClosedAccess
dc.sciencecloudnosend
dc.titleX-ray and Raman determination of InAsSb mole fraction for x < 0.5
dc.typeJournalArticle
dspace.entity.typePublication