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Aluminum-free nitride laser diodes: waveguiding, electrical and degradation properties

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cris.lastimport.scopus2024-02-12T20:47:13Z
dc.abstract.enAn aluminum-free nitride laser diode (LD) operating at a wavelength of λ = 452 nm with a threshold current density of jth = 4.2 kA/cm2 grown by plasma assisted molecular beam epitaxy is demonstrated. Aluminum is successfully eliminated from the cladding layers and the electron blocking layer. The lifetime of the devices with and without aluminum are studied. It is found that aluminum, which is highly susceptible to oxidation, has no influence on the degradation mechanism of nitride optoelectronic devices. Furthermore, comprehensive theoretical calculations are presented to show the impact of removal of aluminum from the structure on LD properties.
dc.affiliationUniwersytet Warszawski
dc.contributor.authorGrzanka, Szymon
dc.contributor.authorBorysiuk, Jolanta
dc.contributor.authorSiekacz, Marcin
dc.contributor.authorWolny, Paweł
dc.contributor.authorPerlin, Piotr
dc.contributor.authorMuzioł, Grzegorz
dc.contributor.authorSkierbiszewski, Czesław
dc.contributor.authorTurski, Henryk
dc.date.accessioned2024-01-24T16:28:33Z
dc.date.available2024-01-24T16:28:33Z
dc.date.issued2017
dc.description.accesstimeAT_PUBLICATION
dc.description.financeNie dotyczy
dc.description.number26
dc.description.versionFINAL_PUBLISHED
dc.description.volume25
dc.identifier.doi10.1364/OE.25.033113
dc.identifier.issn1094-4087
dc.identifier.urihttps://repozytorium.uw.edu.pl//handle/item/100522
dc.identifier.weblinkhttps://www.osapublishing.org/oe/fulltext.cfm?uri=oe-25-26-33113&id=380280
dc.languageeng
dc.pbn.affiliationphysical sciences
dc.relation.ispartofOptics Express
dc.relation.pages33113-33121
dc.rightsOther
dc.sciencecloudnosend
dc.subject.enDiode lasers
dc.subject.enQuantum-well, -wire and -dot devices
dc.titleAluminum-free nitride laser diodes: waveguiding, electrical and degradation properties
dc.typeJournalArticle
dspace.entity.typePublication