Detection of Si doping in the AlN/GaN MQW using Super X – EDS measurements

A multiple-quantum-well structure consisting of 40 periods of AlN/GaN:Si was vestigated using a transmission electron microscope equipped with energy-ispersive X-ray pectroscopy. The thicknesses of the AlN barriers and the GaN quantum wells ere 4 nm and 6 nm, respectively. The QW layers were doped with Si to a oncentration of 1.3 × 1019cm 3 (0.012 % at). The procedure for quantifying such a doping level using AlN as a standard is presented. The EDS results (0.013 % at) are compared with secondary ion mass spectrometry measurements (0.05 % at).