Disorder-induced natural quantum dots in InAs/GaAs nanostructures

Properties of excitons confined to potential fluctuations due to indium distribution in the wetting layerwhich accompany self-assembled InAs/GaAs quantum dots are reviewed. Spectroscopic studies aresummarized including time-resolved photoluminescence and corresponding single-photon emissioncorrelation measurements. The identification of charge states of excitons is presented which is basedon results of a theoretical analysis of interactions between the involved carriers. The effect of the dots’environment on their optical spectra is also shown.